Vertical Transistor with Ultrathin Silicon Nitride Gate Dielectric

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Nanoscale vertical thin-film transistors (VTFTs) are fabricated employing a new ultrathin silicon nitride (SiNx) gate dielectric for applications in high-resolution active matrix flat panel electronics. Illustrated are the cross-section schematic and SEM image of a 500 nm channel length VTFT with a 50 nm thick SiNx gate dielectric. The device demonstrates excellent gate control with gate leakage as low as 0.1 nA cm−2.