Abstract
In this paper, we demonstrate the vertical stacking of ZnO nanowire (NW) field-effect transistors (FETs), a ZnO NW-based nanofloating gate memory (NFGM) device, and a ZnO NW-based inverter on a flexible plastic substrate. For the vertical stacking, four ZnO NW devices are sequentially constructed on each of four layers, and these devices are isolated from each other using Al2O3 material. Each of the stacked ZnO NW devices exhibits the good electrical characteristics with n-type depletion modes under both the flat and bent states. Moreover, the switching, memory, and inverting characteristics of the stacked ZnO NW devices are examined.
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