Vertical SiC JFET model with unified description of linear and saturation operating regions

Zhiyang Chen Zhiyang Chen,J Hudgins,A Grekov,D Sheridan,Ruiyun Fu Ruiyun Fu,J Casady,A Mantooth,E Santi

doi:10.1109/ecce.2009.5316268

Vertical SiC JFET model with unified description of linear and saturation operating regions

Zhiyang Chen Zhiyang Chen, J Hudgins + Show 6 more

https://doi.org/10.1109/ecce.2009.5316268

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Publication Date: Sep 1, 2009

Citations: 13

Affiliation: University of Nebraska–Lincoln, University of South Carolina, University of Arkansas at Fayetteville

#Junction Field Effect Transistor #SiC Junction Field Effect Transistor + Show 8 more

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Abstract

A novel SiC junction field effect transistor (JFET) model is proposed that uses a unified description of linear and saturated conduction modes. Advantages of the proposed model are improved robustness and convergence, inclusion of fielddependent mobility effects, and more physical description of the current saturation phenomenon. The model is validated against a normally-off JFET sample over a wide temperature range. Finite element simulation are used to demonstrate the physicsbased nature of the proposed model.

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