Abstract
Corundum-structured gallium oxide (α-Ga2O3), which exhibits an ultra-wide bandgap of 5.3 eV, has been exploited in optoelectronics devices. We demonstrate a vertical-type photodetector using α-Ga2O3. Corundum-structured rhombohedral indium tin oxide (rh-ITO), which has high conductivity, was used for a bottom electrode to realize a vertical structure. An α-Ga2O3 epitaxial film was successfully grown on rh-ITO thin films with an α-Fe2O3 buffer layer via mist chemical vapor deposition. The vertical α-Ga2O3 photodetector is sensitive to the UV-C region, and its photoresponsivity is 9.7 × 10-4 A/W at 220 nm without any bias voltage. This study contributes to vertical-structure device applications using corundum-structured oxides.
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