Abstract
The authors report the first demonstration of vertical optical communication through stacked Si wafers using low-cost hybrid monolithic thin-film InGaAsP/InP emitters and detectors, designed for operation at 1.3 mu m. A thin-film InGaAsP homojunction light-emitting diode (LED) (4.5- mu m thick) was deposited onto a polished, nitride-coated Si wafer using a modified epitaxial liftoff technique. A InP/InGaAsP/InP p-i-n photodetector (4.5- mu m thick) was similarly deposited on an identically prepared Si wafer. The emitter and detector were then aligned, resulting in a stacked wafer configuration suitable for vertical through-wafer optical communication. This integration technique eliminates the need for direct growth of compound semiconductors onto Si. >
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