Abstract
Gate induced interlayer tunneling field effect transistor (iTFET) is studied analytically considering vertical heterostructure of boron nitride (BN) layer sandwiched between two monolayers of molybdenum disulfide (MoS2). The device structure in comparison to recently reported work shows subthreshold slope close to 60mV/decade and operation at upper GHz.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
