Vertical GaN trench MOSFETs with step-graded channel doping

Abstract

Vertical GaN trench MOSFETs have shown enormous potential for efficient power switching applications. Low ON-resistance (RON) to minimize power loss, high output current (ION) to maximize driving capability, and large threshold voltage (Vth) to avoid false turn-on are highly desirable. This work reports vertical GaN trench MOSFETs with step-graded channel doping. Conventional devices with uniform channel doping were involved for comparison. The experimental results show that step-graded channel doping can achieve an improved trade-off between ION, RON, and Vth than uniform channel doping.