Vertical GaN trench MOS barrier Schottky rectifier maintaining low leakage current at 200 °C with blocking voltage of 750 V

Abstract

In this paper, we report on a vertical GaN trench MOS barrier Schottky (TMBS) rectifier for attaining low leakage current at high temperature and high reverse voltage. At 200 °C, a high blocking voltage of 750 V was achieved at a leakage current of 1 mA/cm2. To the best of our knowledge, this blocking voltage is the highest ever reported for GaN Schottky rectifiers operating at such a high temperature. Furthermore, the fabricated TMBS rectifier operated at large forward currents up to 10 A. These results verify that the developed vertical GaN TMBS rectifiers have great potential as high-power and high-temperature devices.