Vertical GaN Shottky barrier diode with thermally stable TiN anode* *Project supported by the Open Project of State Key Laboratory of Superhard Materials, Jilin University (Grant No. 201906), Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics (Grant No. 202006), and the Science and Technology Program of Ningbo (Grant No. 2019B10129).

Abstract

Vertical GaN Schottky barrier diodes with TiN anodes were fabricated to investigate the electrical performance. The turn-on voltage and specific on-resistance of diodes are deduced to be approximately 0.41 V and 0.98 mΩ⋅cm2, respectively. The current-voltage curves show rectifying characteristics under different temperatures from 25 °C to 200 °C, implying a good thermal stability of TiN/GaN contact. The low-frequency noise follows a 1/f behavior due to the multiple traps and/or barrier inhomogeneous at TiN/GaN interface. The trapping/de-trapping between traps and Fermi level causes the slight capacitance dispersion under reverse voltage.