Abstract
High power vertical GaN devices are in great demand recently due to their potential on extremely high-power conversion efficiency. Here, we show vertical GaN p–n power diodes fabricated on bulk GaN substrates with an optimized guard ring structure for electrical field management and high breakdown voltage. By using a low doped (∼1015 cm−3) 28 μm thick drift layer in combination with optimized ohmic contacts, a breakdown voltage (VB) of 4.9 kV and a low specific on-resistance (RON) of 0.9 mΩ cm2 were achieved. In combination with the high breakdown voltage and low specific on-resistance, the device demonstrated a Baliga figure of merit (V2B/RON) of 27 GW/cm2.
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