Abstract
A guard ring (GR) formed by nitrogen-ion implantation doping was employed to improve the breakdown voltage <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(V_{\mathrm{br}})$</tex> of vertical Ga <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> Schottky barrier diodes (SBDs) by eliminating electric field concentration at the edges of anode and field-plate (FP) electrodes. Four types of vertical SBD structures with (a) neither a GR nor a FP, (b) a GR, (c) a FP, and (d) both a GR and a FP were fabricated on the same substrate. The SBDs with a GR [structures (b) and (d)] showed larger <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$V_{\mathrm{br}}$</tex> values than their GR-free counterparts [structures (a) and (c)], implying that the GR successfully redistributed the peak electric field at the anode and/or FP edges. Considering the trade-off relationship between <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$V_{\mathrm{br}}$</tex> and specific on-resistance <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(R_{\mathrm{on}})$</tex> , a <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$V_{\mathrm{br}}/R_{\mathrm{on}}$</tex> combination of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$1.43\ \mathrm{kV}/4.7\ \mathrm{m}\Omega \mathrm{cm}^{2}$</tex> for the GR/FP-SBD corresponds to one of the best balanced data for Ga <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> SBDs.
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