Abstract
Vacuum channel transistors are potential candidates for low-loss and high-speed electronic devices beyond complementary metal-oxide-semiconductors (CMOS). When the nanoscale transport distance is smaller than the mean free path (MFP) in atmospheric pressure, a transistor can work in air owing to the immunity of carrier collision. The nature of a vacuum channel allows devices to function in a high-temperature radiation environment. This research intended to investigate gate location in a vertical vacuum channel transistor. The influence of scattering under different ambient pressure levels was evaluated using a transport distance of about 60 nm, around the range of MFP in air. The finite element model suggests that gate electrodes should be near emitters in vertical vacuum channel transistors because the electrodes exhibit high-drive currents and low-subthreshold swings. The particle trajectory model indicates that collected electron flow (electric current) performs like a typical metal oxide semiconductor field effect-transistor (MOSFET), and that gate voltage plays a role in enhancing emission electrons. The results of the measurement on vertical diodes show that current and voltage under reduced pressure and filled with CO2 are different from those under atmospheric pressure. This result implies that this design can be used for gas and pressure sensing.
Highlights
Several potential candidates for low-loss and high-speed electronic transistors beyond complementary metal oxide semiconductors (CMOS) have been proposed
Reducing the transport distance to smaller than the mean free path (MFP) allows devices to operate in atmospheric pressure [5,6,7,11,12,13] and function under a small voltage that is suitable for practical circuits
The behavior of the current–voltage plots related to the application of gate potential is similar to typical metal oxide semiconductor field effect-transistor (MOSFET) from the particle trajectory model
Summary
Several potential candidates for low-loss and high-speed electronic transistors beyond complementary metal oxide semiconductors (CMOS) have been proposed. If the transport distance of a field emission (FE) is greater than the submicroscale, a vacuum condition is required to prevent carrier scattering, due to collision with moving particles in an ambient environment, and to achieve ballistic transport [16,17,18,19]. Nanoscale horizontal electron emission air channel devices generally require advanced lithography technology or a trimming approach to define transport distance [4,5,6,7,10,11,12,13,14]. Vertical electron emission air channel devices define transport distance on the basis of the thicknesses of metal-dielectric stacked films [8,9]. The other aims of this paper were to fabricate a vertical diode with a transport distance near the MFP (~68 nm) in atmospheric pressure and to discuss carrier scattering under atmospheric and other ambient pressures
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
