Abstract
The physics goals at the proposed future Compact Linear Collider (CLIC) pose challenging demands on the performance of the detector system. Precise hit-time tagging with a few nanoseconds resolution is required for the vertex and tracking detectors, as well as a very low mass per layer combined with a single-plane spatial resolution of a few micrometres. To address these requirements, an all silicon vertex and tracking system is foreseen at CLIC. To this end, a broad R&D program on new silicon detector technologies is currently pursued. While the silicon pixel R&D for the CLIC vertex detector and tracker covers a wide range of various technologies and the development of different tools, this contribution is mainly focussed on the development of monolithic CMOS sensors with a small collection electrode.
Highlights
The Compact Linear Collider CLIC is a project for a linear e+e− coll√ider in the post-LHC era at CERN, with a centre-of-mass energy up to s = 3 TeV [1]
While the silicon pixel R&D for the CLIC vertex detector and tracker covers a wide range over various technologies and the development of different tools, this contribution is mainly focussed on the development of monolithic CMOS sensors with a small collection electrode
To fit complex functionality, such as power pulsing and simultaneous Time of Arrival (ToA) and Time over Threshold (ToT) measurement capabilities in the small pixels, hybrid technologies with the sensor and the circuitry in different physical layers are explored with innovative sensor concepts
Summary
To achieve a high luminosity, the CLIC beam is reduced to a size of 40 nm × 1 nm × 44 μm at the final focussing close to the interaction point. To. Preprint submitted to Nuclear Physics B mitigate the impact of these background hits, precise hit time tagging with a resolution of ∼ 5 ns is needed in the vertex and tracking system. To achieve the required measurement accuracy, a low mass of ∼ 0.2 %X0 per layer for the vertex detector and ∼ 1 %X0 per layer for the tracker is needed, combined with a single-plane spatial resolution of 3 μm in the vertex detector and 7 μm in the tracker [2]. A broad R&D program on new silicon detector technologies is carried out. This contribution gives a brief overview of the different technologies that are explored and mainly concentrates on the development of CMOS sensors with a small collection electrode
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