Abstract
With the purpose of controlling the incorporation of arsenic during RPCVD Si epitaxy, the surface segregation of As during lowtemperature epi growth was investigated. Parameters such as the Si growth rate, As deposition rate and As incorporation rate, which in previous models were either not evaluated or assumed to be constant, were found here to depend on both the As surface coverage and the arsine partial pressure. Knowledge of these dependencies was employed in simultaneous As deposition and Si epi growth to obtain highlycontrollable doping profiles by appropriate variation of the arsine partial pressure.
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