Abstract
As reported by other authors, we have also observed that the Si growth rate decreases with increasing phosphine (PH 3) flow rate in gas source Si molecular beam epitaxy using phosphorous (P) as a n-type dopant. Why small quantity PH 3 can affect Si growth rate? Up to now, the quantitative characterization of PH 3 flow influence on Si growth rate is little known. In this letter, the PH 3 influence will be analyzed in detail and a model considering strong P surface segregation and its absorption of hydrogen will be proposed to characterize the effect.
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