Abstract
Varistor characteristics at room temperature were estimated for (Ba, Sr)TiO3 semiconducting ceramics having positive temperature coefficient of resistivity (PTCR) characteristics and a low Curie point less than -100° C. The samples were sintered in a reducing atmosphere at 1350 or 1400° C for 2 h and then annealed in an oxygen atmosphere at 1200° C for 2 h in the cooling process. These samples showed high permittivity originating from the barrier capacitance at grain boundaries in addition to the varistor characteristics. The varistor characteristics and dielectric properties depended on the potential barrier formed by the annealing in oxygen atmosphere.
Published Version
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