Abstract
SnS films with different Sn contents were fabricated by thermal co-evaporation. The variation in structures, optical and electrical properties of SnS with different Sn contents was systematically investigated. The prepared films were characterized by X-ray diffraction, field emission scanning electron microscopy, and energy dispersive spectroscopy analysis. An excess of Sn can result in a change of the SnS semiconducting film from p-type to n-type. The SnS films showed band gaps in the range of 1.25–1.57eV and high mobilities of 7.29cm2/V∙s, indicating suitability for application in photovoltaic cells. The photoelectric conversion efficiency (PCE) of the heterojunction solar cell was 1.26% with a open circuit voltage (VOC) of 0.153V and a short circuit current density (JSC) of 29.61mA/cm2.
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