Abstract
The variational method is used to obtain the ground- and first-excited states for the soft-Coulomb central potential, 1/r2+d2, characterized by a bias distance d, taken into account as a fixed parameter. Applications are presented for spatially indirect excitons, i.e., photo-generated electron-hole (e-h) bound pairs, where the two charges are kept separated in two different regions of a heterostructure. We consider one- or two-dimensional systems, namely, quantum wires or wells, respectively, and compare the results with numerical calculations obtained by finite-difference diagonalization of the Hamiltonian. An explicit example is given for GaAs-based heterostructures.
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