Abstract
A thin film of EuSe was used as a tunnel barrier between the normal metal Ag and superconducting Al. Tunneling characteristics at 0.45 K showed the following: (1) the absence of exchange splitting of the EuSe conduction band in zero magnetic field, where EuSe is antiferromagnetic; (2) field-dependent spin polarization of the tunneling electrons as high as 97% at H\ensuremath{\ge}1.2 T; (3) enhanced Zeeman splitting of the Al quasiparticle states because of the exchange interaction at the Al-EuSe interface; (4) a decrease in tunnel resistance by as much as 75% in a magnetic field \ensuremath{\ge}1.7 T. The results show that EuSe barrier junctions provide field-tunable resistors and sources of low-energy polarized electrons.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
