Abstract
The variation of material properties along the growth axis of single crystal LEC GaAs ingots is studied. Parameters investigated include concentration and lateral variation of EL2, photoluminescence intensity, resistivity, the concentration of extrinsic shallow acceptors and, after test implantation, the sheet resistivity. Correlations between the observed trends are identified and discussed in terms of compensation and segregation. In general, a very satisfactory homogeneity is found. Remaining variations are identified and evaluated with respect to their device-relevant consequences.
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