Abstract
This work reports on the spread in threshold voltage and flat-band voltage of natural n-MOS enhancement mode transistors on the wafer and wafer-to-wafer processing by the low thermal budget process. It is shown that the threshold voltage (Vth) varies within ± 10mV to ±20mV around the average value of 0-44 V. The flat-band voltage (VFB) varies within ±15mV around the average value of 1 -05 V. The variation in VFB and Vth is also marginal from wafer-to-wafer.
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