Variability analysis of a graded-channel dual-material double-gate strained-silicon MOSFET with fixed charges

Abstract

In this paper, variability analysis of a graded-channel dual-material (GCDM) double-gate (DG) strained-silicon (s-Si) MOSFET with fixed charges is analyzed using Sentaurus TCAD. By varying the different device parameters, the variability of the proposed GCDM-DG s-Si MOSFET is analyzed with respect to variations in threshold voltage, drain current, and short-channel effects as the line edge roughness and fluctuations in random dopant, contact resistance, and oxide thickness are considered. The results confirm that the effect of process variations is severe when the device has fixed charges at the oxide interface. Moreover, the proposed GCDM-DG s-Si p-MOSFET is less vulnerable to the effects of line edge roughness, fluctuations in oxide thickness, and random dopants in comparison with the proposed GCDM-DG s-Si n-MOSFET. Also, the proposed GCDM-DG s-Si MOSFET is more reliable when compared to the GC-DG s-Si MOSFET from the different variability sources.