Abstract
Seeded chemical and physical vapour transport with H 2 and He, respectively, was used to grow twin-free ZnS x Se 1-x (x < 0.15) single crystals with diameter of 50-55 mm and height up to 15 mm. Use of a source with polycrystalline ZnSSe having a composition gradient along the furnace axis, allowed to improve the homogeneity of alloy composition. The change of x per 1 cm along the growth direction in the grown crystals was as small as 1.5%. The etch pit density was (3-5) x 10 4 cm -2 . Specific resistance of ZnSSe wafers was decreased up to 0.06 Ω cm by annealing in liquid Zn:Al.
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