Abstract
Zinc selenide single crystals have been grown in sealed quartz ampoules by the physical vapor transport method. Complete transport of the starting material and single site growth have been achieved with no material adhering to the ampoule wall. Growth is initiated in a narrow channel in the cold finger attached to the growth end of the ampoule. The highest growth rate to date has been 280 mg/day which corresponds to an average transport rate of about 1.93 mmol/day. The largest single crystal, measuring 1 cmX4 mmX2 mm, had a total growing time of 11 days or an average growth rate of 171 mg/day. Polished wafers cut from the crystals have been etched and examined by optical and electron microscopy. No impurities or unwanted phases were detected, but frequent twinning occurs. Etch pit densities on (111) surfaces are as high as 10 6 cm −2.
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