Abstract
A study of the etching of GaAs at 750°C in the GaCl-HCl-AsH 3-H 2-He system shows that the rate increases with the HCl pressure and decreases with the GaCl, AsH 3 and H 2 pressures. Smooth surfaces up to high etch rates are only obtained on (100) and (111)Ga substrates; they require the injection of both GaCl and arsine into the reactor.
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