Abstract
Low energy electron-enhanced etching of GaAs(100) has been achieved by placing the sample on the anode of a low-pressure hydrogen/chlorine dc discharge. Samples etched at room temperature reveal good anisotropy (≳20), good selectivity (≳200 against SiO2 masks at room temperature), and smooth surfaces at etch rates of 250 Å/min; etch rates up to 4.5 μm/min were achieved at 150 °C. The dependence of the etch characteristics on gas composition, pressure, and temperature is described.
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