Abstract
A study of the mechanism of GaAs epitaxial growth by metalorganic chemical vapor deposition (MOCVD) is presented. Both the kinetic and the diffusional limiting stages of the deposition process are examined here. A mass transport model which takes cluster formation of [-GaAs-] n in a hydrogen medium into account is put forward. The model allows the calculation of the convective diffusion to the rotating disk surface in the nonisothermal mode. The growth dependence of GaAs on the mode parameters was obtained; a good compliance of the calculations with experiment was shown.
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