Abstract
High resistivity crystals of , essentially free of the usual Te precipitates, have been vapor grown from a powdered charge, containing a small amount of In, by a modification of the Piper and Polich technique. Attempts to incorporate larger amounts of In in the charge resulted in negligible vapor transport rates which are qualitatively related by means of the transport theory of Lever and Jona to the p‐T and the solidus diagrams of . The observed Te precipitation is consistent with the retrograde solidus of and with the diffusion coefficient of Te in the crystal.
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