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Abstract
Vapor phase epitaxy (VPE) of Hg 1− x Cd x I 2 layers on glass substrates covered by a CdTe buffer layer has been studied. The buffer layers of 2–4 μm thickness were formed by VPE using polycrystalline CdTe and Cd metal sources. The Hg 1− x Cd x I 2 layers were grown using a (Hg 1− y Cd y ) 1− z (I 2) z polycrystalline source, with a composition in the range of y=0.1–0.5 and z=0.5–0.8. Scanning electron microscopy and X-ray diffraction studies have shown that the composition and structure of Hg 1− x Cd x I 2 layers depend strongly on the VPE conditions. Varying the growth time and source composition, it has been possible to obtain Hg 1− x Cd x I 2 layers with the composition x in the range from approximately 0 (HgI 2 tetragonal structure) to 1 (CdI 2 hexagonal structure).
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