Abstract
A new method for depositing parylene-F (PA-F) thin films on silicon substrates has been explored. Hydrogen has been used as a carrier gas along with liquid precursors, dibromotetrafluoro-p-xylene and 1,4-bis(trifluoromethyl)benzene, to deposit PA-F. The properties of this film have been compared with the films obtained by the Gorham dimer method and the liquid precursor method using FTIR, XPS, and XRD. The PA-F films deposited by the dimer or liquid precursor acquired some kind of microcrystallinity on annealing. However, the PA-F films deposited in the presence of hydrogen were amorphous on annealing. This property could be potentially exploited for application in microelectronic device fabrication.
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