Validity of the Padovani–Stratton formulas for analysis of reverse current–voltage characteristics of 4H–SiC Schottky barrier diodes

Abstract

In this present study, we test the accuracy of the Padovani–Stratton models in terms of the percent error in the barrier height extracted by this model from the reverse characteristics I-V simulated by the Tsu-Esaki model over a range −1000 V at room temperature. The thermionic field emission model without image force barrier lowering is much less accurate for low doping concentration (<1015 cm−3), in particular at low reverse bias voltages (<−200 V). While the field emission model is less accurate for high doping concentrations (>1017 cm−3) in particular for high reverse bias voltages. For medium doping concentration, thermionic field emission or field emission models provide an acceptable accurate for medium and high reverse bias voltages (>−100 V), however, it is less accurate at lower reverse bias voltages (<−100 V) and the best accuracy is occurred at about 1016 cm−3. When the Padovani- Stratton models is combined with image force barrier lowering model, the percent error in extracted barrier height takes large values; hence, it is inaccurate on entire range bias.