Abstract
The effect of H2 plasma exposure on CuInSe2 was studied by synchrotron radiation soft-x-ray photoemission spectroscopy. The low-power H2 plasma was generated with a commercial electron cyclotron resonance plasma source using pure H2 with the plasma exposure being performed at 200 °C. In situ photoemission measurements were acquired after each plasma exposure in order to observe changes in the valence-band electronic structure as well as changes in the In 4d and Se 3d core lines. The results were correlated in order to relate changes in surface chemistry to the electronic structure. These measurements indicate that the H2 plasma exposure type converts the CuInSe2 surface to an n-type surface as well as converting the In+3 valency state to an In+1 valency state.
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