Abstract
We report on a photoemission study of the ZnTe/GaSb(110) heterojunction prepared under ultrahigh vacuum conditions. Upon deposition of ZnTe on a cleaved GaSb(110) surface by molecular-beam epitaxy, a reacted layer is formed, which is characterized by the liberation of Sb atoms from the substrate, and the reaction between Ga and Te. The thickness of this layer is dependent on the temperature of the substrate, and is on the order of one monolayer under optimum conditions. The ZnTe overlayers show good crystalline order as evidenced by low-energy electron diffraction and valence level photoemission. Taking into account band bending upon interface formation, we derive a valence-band offset of −0.34 eV. This result is compared with theoretical predictions as well as experimental data based on band offset transitivity. The determination of ionization energies for both substrate and overlayer demonstrates the failure of the electron affinity rule in predicting heterojunction valence-band offsets.
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Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
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