Abstract
The experimental determination of valence band offsets in semiconductor heterojunctions often disagrees with theoretical predictions. This deviation is attributed to reacted interlayers at the interface, which induce additional dipoles and thus tune the valence band offset. Therefore we have studied the influence of ultrathin metal interlayers with different reactivity and found indeed that these layers change the valence band offset. We have characterized the CdS/InP(110) heterojunction with monolayers of Sb and Bi (unreactive) and Al(reactive) using core and valence level photoemission. These metals were chosen since their interaction with InP had been extensively studied before. We find that the Sb and Bi interlayers decrease the valence band offset by 0.2 eV, while Al leads to an increase of about 0.1 eV. The interlayers are also found to have a significant influence on the amount of interface reaction.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
