Abstract
Valence band structure of GaAs/Ga xIn 1-xP strained-layer quantum wells are investigated within an envelope function formalism which takes into account the valence subbands mixing through the Luttinger-Kohn Hamiltonian and the strain effects due to the lattice-mismatch through the Pikus-Bir Hamiltonian. For a Ga mole fraction x greater than 0.516 (compression), the top valence band is heavy-hole-like. For x less than 0.516 (tension strain), the top valence subband can be either heavy-hole-like or light-hole-like, depending on the well width and on the shear deformation potential. Interesting features are also obtained for the effective masses of the valence subbands from ϵ( K → ) energy dispersion calculations along the in-plane K → direction.
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