Abstract
ABSTRACTThis work reports on the calculations of the electronic structure of GaAs/GaxIn1−x P strained layer quantum wells. The calculations are based on the multiband envelope function approach, considering the valence band offset value that has been recently proposed. The effect of strain due to the lattice-mismatch is studied. The calculated results are compared with the data obtained from photoreflectance measurements. Satisfactory agreement is obtained.
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