Abstract
We present photoemission spectra calculated within the one-step model in normal emission from GaN and GaAs (001) surfaces. Structures in the spectra are discussed in terms of direct transitions from bulk valence states and as emissions from surface states, depending on polarization of the light. Thereby all of the pronounced structures in the energy distribution curves are uniquely associated with the participating bands and their orbital and layer resolved composition. The theoretical intensities are compared with experimental angle resolved ultraviolet photoemission spectra for clean GaAs and GaN surfaces yielding a good agreement. The comparison underlines the necessity of a full calculation for the interpretation of experimental data. In addition, we investigate the change in the calculated distribution curves introduced by covering a GaAs(001) substrate with several overlayers of GaN.
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