Abstract
The valence band offset (VBO) of wurtzite indium nitride/strontium titanate (InN/SrTiO3) heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be 1.26 ± 0.23 eV and the conduction band offset is deduced to be 1.30 ± 0.23 eV, indicating the heterojunction has a type-I band alignment. The accurate determination of the valence and conduction band offsets paves a way to the applications of integrating InN with the functional oxide SrTiO3.
Highlights
Group III nitrides have attracted much attention in recent years for their promising applications in highpower, high-speed devices [1,2]
We present an experimental determination of the indium nitride (InN)/STO valence band offset (VBO) by X-ray photoeletron spectroscopy (XPS)
The surface of all samples were exposed to air, so the contaminations existing on the surfaces may affect the precise determination of the valence band maximum (VBM)
Summary
Group III nitrides have attracted much attention in recent years for their promising applications in highpower, high-speed devices [1,2]. InN/STO shows many promising properties, there is a lack of experimental data on the interface band alignment parameters of the InN/STO heterojunction to date. X-ray photoeletron spectroscopy (XPS) has been demonstrated to be a direct and powerful tool for measuring the valence band offsets (VBOs) of heterojunctions [7,8,9].
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