Valence band offset of InN/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy

Abstract

The valence band offset (VBO) of InN/4H-SiC heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be 0.55±0.23 eV and the conduction band offset is deduced to be −2.01±0.23 eV, indicating that the heterojunction has a type-I band alignment. The accurate determination of the valence and conduction band offsets is important for applications of InN/SiC optoelectronic devices.