Abstract
Valence band dispersion of GaAs-Ga 1-xAl xAs single finite quantum well in presence of an external electric field is computed by means of the perturbed Luttinger Hamiltonian, when the field is perpendicular to the semiconductor layers. We use an iterative process to solve the set of coupled differential equations, taking into account only the mixing of the deepest bounded valence states. This situation is important for the second and third valence band levels in the k-space.
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