Abstract
AbstractMetal halide perovskite photodiodes have garnered extensive attention owing to their favorable optoelectronic properties, rendering them attractive for visible, near‐infrared, and X‐ray sensors. However, their predominant reliance on solution‐processing deposition techniques poses challenges for seamless integration into existing industrial processes. In this study, this limitation is addressed by developing fully vacuum‐processed perovskite photodiodes with varying hole transport layers (HTL). These findings underscore the critical role of HTL selection in influencing the dark and noise current characteristics of the diodes. With an optimized HTL, photodiodes are obtained with low noise current (≈3 10−14 A Hz−1/2) and high specific detectivity (≈1012 Jones at 710 nm at −0.5 V). The photodiodes are also tested as X‐ray detectors and are found to be stable under X‐ray radiation, with state‐of‐the‐art sensitivity of 33 ± 4 µC Gy−1 cm−2 and a low limit of detection of 2.0 ± 1.6 µG s−1. These insights contribute to the development of perovskite photodiodes with improved performance and broader industrial applicability.
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