Abstract
High quality ruthenium Schottky barrier diodes were fabricated on organometallic vapour phase epitaxially grown n-GaAs, with a carrier density of 1 x 10 16 cm −3, by electron beam evaporation of ruthenium at a rate of 1 Å s −1. The annealing studies were carried out in vacuum over the temperature range from 225 °C to 600 °C. The electrical characteristics of the Schottky contacts were evaluated by standard current-voltage I–V and capacitance-voltage C–V measurements. The effective barrier height ϕ e I–V and the flat band barrier height ϕ b C–V of the as-deposited R u-n-GaAs Schottky contacts were 0.865 eV and 0.916 eV respectively. These barrier heights reached their respective maximum values of 0.925 eV and 0.955 eV after annealing at 450 °C. Auger electron spectroscopy results indicated that ruthenium forms structurally a very stable contact to GaAs, with no evidence of any chemical reactions between ruthenium and GaAs up to 500 °C. Very limited diffusion of arsenic through the ruthenium layer was observed after annealing at 400 °C. Diffusion of arsenic increased sharply after annealing at temperatures above 500 °C.
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