Abstract
The formation of boron interstitial clusters is a key limiting factor for the fabrication of highly conductive ultrashallow doped regions in future silicon-based device technology. Optimized vacancy engineering strongly reduces boron clustering, enabling low-temperature electrical activation to levels rivalling what can be achieved with conventional preamorphization and solid-phase epitaxial regrowth. An optimized 160keV silicon implant in a 55∕145nm silicon-on-insulator structure enables stable activation of a 500eV boron implant to a concentration ∼5×1020cm−3.
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