Abstract
We have used positron annihilation spectroscopy to study the vacancy defects in (Zn, Mn)O crystals grown by chemical vapor transport (CVT). Our results show that Zn vacancies are present in both as-grown and high temperature annealed ZnO and Zn0.985Mn0.015O. In addition, we observe O vacancies in ZnO with no Mn. After annealing in O2 at 1000 ∘C, there is no change in the vacancy distribution in ZnO, while the Zn vacancy concentration increases by an order of magnitude in Zn0.985Mn0.015O.
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