Abstract
Thermal helium desorption spectrometry (THDS) provides a sensitive technique for measuring the concentration of vacancy type defects at low defect concentrations. This technique has been utilized to measure vacancy annealing curves for single crystalline Mo(110) irradiated with 3 keV He, 1 keV He and 3 keV H2 ions. In order to extract the vacancy migration energy EVM from the measured data, the annealing curves have been analysed by using a simple diffusion model. The value of EVM obtained is 1.23 ±0.05 eV. In addition, an attempt has been made to examine the influence of hydrogen on the annealing behaviour of vacancies in Mo. It appears that hydrogen does not have any measurable influence on the vacancy annealing curves. The dissociation energy of hydrogen bound to vacancies in Mo is found to be less than 1.4 eV.
Published Version
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