Abstract
A new bipolar device utilizing built-in stress gradient caused by V-groove is proposed. The V-grooves are formed in the interdigital or stripe type transistors so that the band gap in the base becomes narrower than that in the emitter when compression is applied by bonding the pellets onto Cu headers because of thermal expansion difference. The band gap change caused by the V-groove is calculated. This band gap gradient greatly increases the downward and/or upward common emitter current gain. A preliminary experiment was performed with a specially arranged transistor stressed by a sapphire stylus. The upward current gain was increased by a factor of 1000 with stress.
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