Abstract
UV Total Dose Nonvolatile Sensor Using Silicon–Oxide–Nitride–Oxide–Silicon Capacitor with Oxy-nitride as Charge-trapping Layer
Highlights
The measurement of UV irradiation total dose (TD) is very important in various UV radiation applications, such as biotechnology and medical technology
A silicon–oxide–nitride–oxide–silicon (SONOS) capacitor device has been shown to be suitable for nonvolatile UV irradiation TD sensor applications.[1,2,3] UV irradiation induces a significant increase in the threshold voltage VT of the SONOS capacitor device and this UV-induced increase in VT for the SONOS capacitor is correlated with UV TD
When the O-SONOS capacitor structures are subjected to UV TD irradiation, electrons from the silicon substrate can be excited by UV photons
Summary
The measurement of UV irradiation total dose (TD) is very important in various UV radiation applications, such as biotechnology and medical technology. Negative charges are accumulated permanently in the trapping layers of the SONOS capacitor device. This is the UV-radiation-induced charging process in the nonvolatile SONOS capacitor device. The improvement of the UV-radiation-induced charging effect and the charge-retention reliability characterization of a SONOS device after UV irradiation have not been well studied; they are discussed in this study. The electrical characteristics of the O-SONOS devices under various UV TD conditions, including radiation-induced charge effect, gate leakage current, and charge-retention reliability, are the main subjects of this study.
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