UV Rewritable Hybrid Graphene/Phosphor p-n Junction Photodiode.

Abstract

Graphene-based p-n junction photodiodes have a potential application prospect in photodetection due to their broadband spectral response, large operating bandwidth, and mechanical flexibility. Here, we report an ultraviolet (UV) rewritable p-n junction photodiode in a configuration of graphene coated with an amorphous phosphor of 4-bromo-1,8-naphthalic anhydride derivative polymer (poly-BrNpA). Under moderate UV irradiation, occurrence of photoisomerization reaction in the poly-BrNpA film leads to its drastically modified optical characteristics and a concurrent n-type doping in the underneath graphene. Meanwhile, the poly-BrNpA film, highly sensitive to water molecules, has a capability of restoring graphene to its initial p-type doping status by means of water adsorption. Based on these findings, a lateral graphene/poly-BrNpA p-n junction photodiode, responsive to visible light at the junction interface, can be written by UV irradiation and then erased via water adsorption. The p-n junction photodiode is rewritable upon such repetitive loops showing repeatable optoelectronic properties. This study provides a new scheme and perspective of making graphene-based rewritable p-n junction photodiodes in a flexible and controllable way, and it may contribute to expanding new families of optoelectronic devices based on two-dimensional materials.