Abstract
We developed a new UV-Raman spectroscopy system for local and global strain measurements in Si. Using a 364 nm excitation laser, strain in an ultra-thin Si film can be measured. Because of the resonance effect using this particular wave length, reasonably short measurement time is realized to obtain strain mapping with keeping the sample at sufficiently low temperature. An in situ wavenumber calibration system has been newly developed for superior wavenumber resolution and precision of approximately 0.1 cm-1. A quasi-line shape excitation light source has also been developed to verify the effective spatial resolution. Strain mapping and spectral measurements for relaxation by rapid thermal annealing in strained-Si substrates are demonstrated.
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