UV photoluminescence from GaN self‐assembled quantum dots on Al x Ga 1– x N surfaces grown by metalorganic chemical vapor deposition

Abstract

We have successfully grown GaN self-assembled quantum dots (QDs) with high density on an AlxGa1–xN surface, by the Stranski-Krastanow growth mode in a metalorganic chemical vapour deposition. An abrupt transition from two-dimensional to three-dimensional growth mode is observed by depositing over the critical thickness of GaN. The density of the QDs can be changed between 109 and 1010 cm–2. Furthermore, intense photoluminescence (PL) peaks from both the QDs and the wetting layer are clearly observed even in the uncapped QD structures at room temperature. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)